A Junctionless Gate-All-Around Silicon Nanowire FET of High Linearity and Its Potential Applications
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چکیده
منابع مشابه
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ژورنال
عنوان ژورنال: IEEE Electron Device Letters
سال: 2013
ISSN: 0741-3106,1558-0563
DOI: 10.1109/led.2013.2244056